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| 2SD2098 Elektronische Bauelemente RoHS Compliant Product NPN Silicon Epitaxial Planar Transistor SOT-89 Description The 2SD2098 is an epitaxial planar type NPN silicon transistor. Features * Excellent DC Current Gain Characteristics * Low Saturation Voltage, Typically VCE(SAT)=0.25V At IC/IB=4A/0.1A REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 q TYP. 0.70 REF. Absolute Maximum Ratings at TA=25 C Symbol VCBO VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse)* 1 Total Power Dissipation Junction and Storage Temperature Parameter Value 50 20 6 5 10 0.5 (2.0* ) -55~+150 2 o Units V V V A A W O IC ICP PD TJ,Tstg C *1: Single pulse, PW=10ms *2: When mounted on a 40*40*0.7mm ceramic board ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage DC Current Gain o Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) Min 50 20 6 - Typ. 0.25 - Max - 0.5 0.5 1 Unit V V V uA uA V Test Conditions IC=50A,IE=0 IC=1mA,IB=0 IE=50A,IC=0 VCB=40V,IE=0 VEB=5V,IC=0 IC=4A,IB=0.1A VCE= 2 V, IC=0.5 A VCE= 6 V, IC=50mA,f=100MHz VCB=20V , f=1MHz,IE=0 *hFE 120 390 fT 150 Output Capacitance Cob 30 2% Measured under pulse condition. Pulse widthO300s, Duty CycleO * Gain-Bandwidth Product MH z pF Classification of hFE Rank Range Q 120~270 R 180~390 http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 2SD2098 Elektronische Bauelemente NPN Silicon Epitaxial Planar Transistor Characteristics Curve http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 2SD2098 Elektronische Bauelemente NPN Silicon Epitaxial Planar Transistor http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3of 3 |
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